Ferroelectric non-volatile RAM
The FM25W256 is a 256-Kbit non-volatile memory that uses an advanced ferroelectric process. A ferroelectric random access memory memory or F-RAM is non-volatile and performs read and write operations similar to RAM. It provides reliable data storage for 151 years while eliminating the complexity, overhead, and reliability problems associated with serial flash, EEPROM, and other nonvolatile memories.
Features
- Direct hardware replacement for serial SPI EEPROM or SPI Flash
- write at standard supply voltage
- up to 500x write speed compared to typ. EEPROMs
bulletpoint# 100 trillion (10^14) read/write cycles
- low power operation: 250 µA active current (1 MHz)
FRAM, 256 Kb (32 K x 8), 2.7 ... 5.5 V, SO-8
€8.74FM25W256-G
Technical information
| General | |
|---|---|
| Model | FRAM |
| Type | Serial |
| Mounting form | SO-8 |
| Memory | 256 kb (32l x8) |
| Electrical values | |
| Supply voltage | 2.7-5.5 VDC |
| Frequency | 20 MHz |
| Other | |
| Temperature range | -40..+85 |
| Manufacturer specifications | |
| Manufacturer | CYPRESS |
| Manufacturer ID | FM25W256-G |
| Weight | 1.0E-4 kg |
| RoHS | conform |
| EAN/GTIN | 9900003139183 |
| HS-Code | 85423290 |
Safety information
Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de