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High-speed SRAM, 1 Mb (128 K x 8), 3.3 V, 10ns, TSOP-32
High-speed SRAM, 1 Mb (128 K x 8), 3.3 V, 10ns, TSOP-32

High-speed SRAM, 1 Mb (128 K x 8), 3.3 V, 10ns, TSOP-32

€3.91

IS61WV1288EEBLL

High-Speed CMOS Static RAM 3,3V 128kx8 10ns TSOP32(I) with ECC

Description:
The ISSI IS61/64WV1288EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 131,072 words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61/64WV1288EEBLL is packaged in the JEDEC standard 32-pin SOJ, TSOP-II, sTSOP-I, and 48-ball BGA (6mmx8mm).

Features:
- High-speed access time: 10 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical) CMOS standby
- Single power supply
- Fully static operation: no clock or refresh required
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available
- Error Detection and Error Correction

Technical information

General
ModelSRAM
TypeHigh Speed
Designasynchron
Memory1 Mb (128kx8)
Mounting formTSOP-32
Electrical values
Access time10 ns
Supply voltage3.3 VDC
Other
Temperature range-40 ... +85
Implementation
Word Size8 bit
Manufacturer specifications
ManufacturerISSI
Manufacturer IDIS61WV1288EEBLL-10TLI
Weight1.0E-4 kg
RoHSconform
EAN/GTIN9900002845740
HS-Code85423245

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de

Datasheets