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High-speed SRAM, 4 Mb (512 K x 8), 3.3 V, 10ns, TSOP-44
High-speed SRAM, 4 Mb (512 K x 8), 3.3 V, 10ns, TSOP-44

High-speed SRAM, 4 Mb (512 K x 8), 3.3 V, 10ns, TSOP-44

€5.86

IS61WV5128BLL-10

High-Speed CMOS Static RAM 3,3V 512kx8 10ns TSOP44(II)

Description:
The ISSI IS61WV5128Bxx are very high-speed, low power, 524,288-word by 8-bit CMOS static RAMs. The IS61/64WV5128Bxx are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61/64WV5128Bxx operate from a single power supply. The IS61/64WV5128BLL are available in 36-pin 400-mil SOJ and 44-pin TSOP (Type II) packages.

Features:
- High-speed access time: 10 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical) CMOS standby
- Single power supply Vdd 2.4V to 3.6V
- Fully static operation: no clock or refresh required
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available

Technical information

General
ModelSRAM
TypeHigh Speed
Designasynchron
Memory4 Mb (512kx8)
Mounting formTSOP-44
Electrical values
Access time10 ns
Supply voltage3.3 VDC
Other
Temperature range0 ... +70
Implementation
Word Size8 bit
Manufacturer specifications
ManufacturerISSI
Manufacturer IDIS61WV5128BLL-10TLI
Weight1.0E-4 kg
RoHSconform
EAN/GTIN9900002845870
HS-Code85423245

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de

Datasheets