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SRAM, 1 Mb (128 K x 8), 5 V, 55ns, DIL-32 SRAM, 1 Mb (128 K x 8), 5 V, 55ns, DIL-32
In stock SKU AS 6C1008-55PCN

SRAM, 1 Mb (128 K x 8), 5 V, 55ns, DIL-32

MPN AS6C1008-55PCN Manufacturer ALLIANCE
€8.00
incl. 19% VAT · €6.72 excl. VAT
Package
DIP-32
Specifications
General
Model SRAM
Type Low-Power
Design asynchron
Memory 1 Mb (128kx8)
Mounting form DIP-32
Electrical values
Access time 55 ns
Supply voltage 2.7 ... 5.5 VDC
Other
Temperature range 0 ... +70
Implementation
Word Size 8 bit
Manufacturer specifications
Manufacturer ALLIANCE
Manufacturer ID AS6C1008-55PCN
Weight 0.006 kg
RoHS conform
EAN/GTIN 9900001465529
HS-Code 85423245
↓ Datenblatt ALE

128k x 8-bit low-power CMOS SRAM, SRAM, 5 V, 128k x 8, 55 ns, DIP32

The AS6C1008 is a 1,048,576-bit low-power CMOS static random access memory organised as 131,072 words by 8 bits. It is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the operating temperature range. The AS6C1008 is well designed for very low-power system applications and particularly well suited for battery-backed non-volatile memory applications. The AS6C1008 operates from a single power supply of 2.7 V ~ 5.5 V.

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de

€8.00
incl. 19% VAT · €6.72 excl. VAT
999 in stock
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✓ Ships today on orders before 4 pm
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