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SRAM, 4 Mb (512 K x 8), 1.7..3.6 V, SOIC-8
SRAM, 4 Mb (512 K x 8), 1.7..3.6 V, SOIC-8

SRAM, 4 Mb (512 K x 8), 1.7..3.6 V, SOIC-8

€6.49

23AA04M-I/SN

512 Kx8 high-speed CMOS static RAM, SRAM, 3.3-V 10-ns SOJ36

The ISSI IS61LV5128AL is a very high-speed, low-power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128AL is fabricated using ISSI high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS61LV5128AL operates from a single 3.3-V power supply and all inputs are TTL-compatible. The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36-pin mini BGA and 44-pin TSOP (type II) packages

Technical information

General
Model23AA04M
TypeSRAM
DesignSPI/SDI/SQI
Memory512K x 8-bit
Mounting formSO-8
Electrical values
Supply voltage1.7..3.6 VDC
Frequency143 MHz
Other
Temperature range-40..+85
Specials
Write protectionnein
Implementation
Page Size32 Bytes
Manufacturer specifications
ManufacturerMICROCHIP
Manufacturer ID23AA04M-I/SN
Weight0.001 kg
RoHSconform
EAN/GTIN9900003779525
HS-Code85423245

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de