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SRAM, 4 Mb (512 K x 8), 3.135 ... 3.6 V, SO-36J
SRAM, 4 Mb (512 K x 8), 3.135 ... 3.6 V, SO-36J

SRAM, 4 Mb (512 K x 8), 3.135 ... 3.6 V, SO-36J

€11.73

IS61LV5128AL10KL

512Kx8 high-speed CMOS static RAM, SRAM, 3.3-V 10-ns SOJ36

The ISSI IS61LV5128AL is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128AL is fabricated using ISSI high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS61LV5128AL operates from a single 3.3 V power supply and all inputs are TTL-compatible. The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36- pin mini BGA and 44-pin TSOP (type II) packages

Technical information

General
ModelSRAM
TypeHigh Speed
Designasynchron
Memory4 Mb (512kx8)
Mounting formSO-36
Electrical values
Access time10 ns
Supply voltage3.3 VDC
Other
Temperature range0 ... +70
Implementation
Word Size8 bit
Manufacturer specifications
ManufacturerISSI
Manufacturer IDIS61LV5128AL-10KLI
Weight0.001 kg
RoHSconform
EAN/GTIN9900001465635
HS-Code85423245

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de