Your cart is empty

SRAM, 4 Mb (512 K x 8), 5 V, 55ns, DIL-32
SRAM, 4 Mb (512 K x 8), 5 V, 55ns, DIL-32

SRAM, 4 Mb (512 K x 8), 5 V, 55ns, DIL-32

€8.22

AS 6C4008-55PCN

512k x 8-bit low-power CMOS SRAM, SRAM, 5 V, 512k x 8, 55 ns, DIP32

The AS6C4008 is a 4,194,304-bit low-power CMOS static random access memory organised as 524,288 words by 8 bits. It is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the operating temperature range.
The AS6C4008 is well designed for very low-power system applications and particularly well suited for battery-backed non-volatile memory applications.
The AS6C4008 operates from a single power supply of 2.7 V ~ 5.5 V and all inputs and outputs are fully TTL compatible

Technical information

General
ModelSRAM
TypeLow-Power
Designasynchron
Memory4 Mb (512kx8)
Mounting formDIP-32
Electrical values
Access time55 ns
Supply voltage2.7 ... 5.5 VDC
Other
Temperature range0 ... +70
Implementation
Word Size8 bit
Manufacturer specifications
ManufacturerALLIANCE
Manufacturer IDAS6C4008-55PCN
Weight0.005 kg
RoHSconform
EAN/GTIN9900001465536
HS-Code85423245

Safety information

Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
reichelt elektronik GmbH
Elektronikring 1
26452 Sande, DE
[email protected]
https://www.reichelt.de

Datasheets