SRAM, 8 Mb (1 M x 8), 5 V, 45ns, TSOP-44

8-Mbit (1 M × 8) Static RAM, SRAM LLPow as 5 V 1Mx8 45ns TSOP44(II)

Description
The CY62158E MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL?) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected (CE1 HIGH or CE2 LOW). To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19). To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW). See the Truth Table on page 11 for a complete description of read and write modes. The CY62158E device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels.

Features
- Very high speed: 45 ns
- Wide voltage range: 4.5 V-5.5 V
- Ultra low active power
- Typical active current:1.8 mA at f = 1 MHz
- Typical active current: 18 mA at f = fmax
- Ultra low standby power
- Typical standby current: 2 ?A
- Maximum standby current: 8 ?A
- Easy memory expansion with CE1, CE2 and OE features
- Automatic power down when deselected
- CMOS for optimum speed and power
- Offered in Pb-free 44-pin TSOP II package