The MASTERGAN2 is an advanced power system-in-package that integrates a gate driver and two GaN (enhancement type) transistors in a half-bridge configuration. The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 150 mOhm and 225 mOhm for the low and high sides, respectively, while the high side of the integrated gate driver can be easily powered by the integrated bootstrap diode.
The MASTERGAN2 has UVLO protection in both the low and high driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the interlock function avoids cross-circuits.
Technical features
In stock
SKU MASTERGAN2
GaN H-bridge, 600 V, 10/6.5 A, 0.15/0.225 Ohm,QFN-31
MPN MASTERGAN2
Manufacturer STMICROELECTRONICS
€16.72
incl. 19% VAT · €14.05 excl. VAT
Package
QFN-31
Specifications
General
Model
Gate-Treiber
Type
HEMT
Design
H-bridge
Mounting form
QFN-31
Technology
GaN
Electrical values
Supply voltage
4.75-9.5 VDC
Input voltage
3.3-15 VDC
Output Current
10/6.5 A
RDS(on)
150/225 mOhm
Other
Temperature range
-40 .. +125
Manufacturer specifications
Manufacturer
STMICROELECTRONICS
Manufacturer ID
MASTERGAN2
Weight
0.005 kg
RoHS
conform
EAN/GTIN
9900003166301
HS-Code
85423190
Safety information
Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
STMicroelectronics GmbH
Bahnhofstraße 18
85609 Aschheim, DE
[email protected]
https://www.st.com
€16.72
incl. 19% VAT · €14.05 excl. VAT
999 in stock
Ships today on orders before 4 pm
Ships today on orders before 4 pm
✓ Ships today on orders before 4 pm
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✓ 30-day return policy