The MASTERGAN4 is an advanced power system-in-package that includes a gate driver and two enhancement-mode GaN power transistors in half-bridge
Configuration. The integrated power GaNs have a drain-source blocking voltage of 650 V and an RDS(ON) of 225 mOhm, while the high side of the integrated gate driver is
can be powered by the integrated bootstrap diode.
The MASTERGAN4 has UVLO protection for both the lower and upper of the lower and upper driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the latching function avoids cross-circuits.
Technical data
In stock
SKU MASTERGAN4
GaN H-bridge, 600 V, 4 A, 0.225 Ohm ,QFN-31
MPN MASTERGAN4
Manufacturer STMICROELECTRONICS
€12.70
incl. 19% VAT · €10.67 excl. VAT
Package
QFN-31
Specifications
General
Model
Gate-Treiber
Type
HEMT
Design
H-bridge
Mounting form
QFN-31
Output
3x
Technology
GaN
Electrical values
Supply voltage
4.75-9.5 VDC
Input voltage
3.3-15 VDC
Output Current
6.5 A
RDS(on)
225 mOhm
Other
Temperature range
-40 .. +125
Manufacturer specifications
Manufacturer
STMICROELECTRONICS
Manufacturer ID
MASTERGAN4
Weight
0.005 kg
RoHS
conform
EAN/GTIN
9900003166417
HS-Code
85423190
Safety information
Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
STMicroelectronics GmbH
Bahnhofstraße 18
85609 Aschheim, DE
[email protected]
https://www.st.com
€12.70
incl. 19% VAT · €10.67 excl. VAT
999 in stock
Ships today on orders before 4 pm
Ships today on orders before 4 pm
✓ Ships today on orders before 4 pm
✓ Invoice with VAT shown
✓ 30-day return policy