The MASTERGAN5 is an advanced power system-in-package that includes a gate driver and two enhancement-mode GaN power transistors in a half-bridge configuration.
configuration.The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 450 mOhms, while the high-side of the integrated gate driver is readily
by the integrated bootstrap diode.
The MASTERGAN5 has UVLO protection for both the low-side and high-side of the low-side and high-side driver sections to prevent the circuit breakers from operating in low efficiency or hazardous conditions, and the interlock function avoids cross-circuits.
Technical data
In stock
SKU MASTERGAN5
GaN H-bridge, 600 V, 4 A, 0.45 Ohm, QFN-31
MPN MASTERGAN5
Manufacturer STMICROELECTRONICS
€15.18
incl. 19% VAT · €12.76 excl. VAT
Package
QFN-31
Specifications
General
Model
Gate-Treiber
Type
HEMT
Design
H-bridge
Mounting form
QFN-31
Output
4x
Electrical values
Supply voltage
4.75-9.5 VDC
Input voltage
3.3-15 VDC
Output Current
4 A
RDS(on)
450 mOhm
Other
Temperature range
-40 .. +125
Manufacturer specifications
Manufacturer
STMICROELECTRONICS
Manufacturer ID
MASTERGAN5
Weight
0.004 kg
RoHS
conform
EAN/GTIN
9900003166479
HS-Code
85423190
Safety information
Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
STMicroelectronics GmbH
Bahnhofstraße 18
85609 Aschheim, DE
[email protected]
https://www.st.com
€15.18
incl. 19% VAT · €12.76 excl. VAT
999 in stock
Ships today on orders before 4 pm
Ships today on orders before 4 pm
✓ Ships today on orders before 4 pm
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✓ 30-day return policy