The MASTERGAN3 is an advanced power system-in-package that integrates a gate driver and two enhancement-mode GaN transistors in an asymmetrical half-bridge configuration. The integrated GaN power transistors have a drain-source blocking voltage of 650 V and an RDS(ON) of 225 mOhm and 450 mOhm for the low and high sides, respectively.The high side of the embedded gate driver can be easily powered by the integrated bootstrap diode.The high side of the embedded gate driver can be easily powered by the integrated bootstrap diode.
The MASTERGAN3 has UVLO protection for both the low and high driver sections, preventing the circuit breakers from operating at low efficiency or under hazardous conditions, and the latching function prevents cross-circuits.
Technical Features
In stock
SKU MASTERGAN3
GaN H-bridge, 600 V, 6.5/4 A, 0.225/0.45 Ohm ,QFN-31
MPN MASTERGAN3
Manufacturer STMICROELECTRONICS
€13.38
incl. 19% VAT · €11.24 excl. VAT
Package
QFN-31
Specifications
General
Model
Gate-Treiber
Type
HEMT
Design
H-bridge
Mounting form
QFN-31
Output
2x
Technology
GaN
Electrical values
Supply voltage
4.75-9.5 VDC
Input voltage
3.3-15 VDC
Output Current
6.5/4 A
RDS(on)
225/450 mOhm
Other
Temperature range
-40 .. +125
Manufacturer specifications
Manufacturer
STMICROELECTRONICS
Manufacturer ID
MASTERGAN3
Weight
0.001 kg
RoHS
conform
EAN/GTIN
9900003166400
HS-Code
85423190
Safety information
Responsible person for the EU
Economic operator established in the EU, who ensures that the product complies with the required regulations:
STMicroelectronics GmbH
Bahnhofstraße 18
85609 Aschheim, DE
[email protected]
https://www.st.com
€13.38
incl. 19% VAT · €11.24 excl. VAT
999 in stock
Ships today on orders before 4 pm
Ships today on orders before 4 pm
✓ Ships today on orders before 4 pm
✓ Invoice with VAT shown
✓ 30-day return policy